NEW METHOD FOR THE SYNTHESIS OF CDNA FROM CANCER CELLS

Not Available In recent years, much progress has been made in the development of mesa etch edge terminated 4H SiC GTO devices using commercial available material. However, it is found that further improvement in device's blocking voltage is hampered by the catastrophic sidewall local breakdown. At present, the underlying mechanism responsible for this sidewall pre-mature breakdown is not known. A detailed analysis on the electrical characteristics of SiC GTO device suggests that hot electron trapping on the sidewall interface and the resulting local electrical field enhancement may account for the catastrophic sidewall local breakdown in this kind of edge termination device structure. Based on this failure mechanism model, two different termination approaches have been proposed to prevent hot electron trapping for SiC GTO devices. During phase I, effectiveness of the proposed approaches in preventing hot electron trapping and increasing breakdown voltage will be evaluated by device simulation and pn junction diodes fabrication; and more suitable approach for Sic GTOs device will be determined. Phase II will concentrated on development of large area Sic GTO device with high blocking voltage using the selected termination approach. BENEFITS: Development of high voltage SiC GTO devices will provide power electronics system designer with more efficient solid state power switching device with high power handling capability and less cooling requirement for next generation electronic vehicles and other applications. The technology developed will also be useful for other type SiC power device such as SiC p-n junction high-voltage rectifiers, which also have great potential to.