Giant Magnetoresistive Materials for Data Storage Read Head

The recently discovered giant magnetoresistive (GMR) effect in intrinsically layered complex-oxides has opened an unique opportunity to practically realize the next generation magnetic detector head technology. The new GMR complex-oxides hold the potential for overcoming the drawbacks of artificial GMR multilayer materials. Currently, the key to using GMR oxide films in magnetic sensors is the improvement in their field sensitivity. We have conducted the thin film growth of new GMR oxides and demonstrated the highest field sensitivity at room temperature reported to date. Our study indicates that the sensitivity could be significantly improved by reducing carrier scattering at the phase transition. Phase I will further improve the field sensitivity of GMR oxide films meeting the practical read head requirement via the epitaxial growth of high structural perfection single-crystalline films by an innovative plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD is suitable for practical manufacturing. Phase II would anticipate prototype demonstrations. It is anticipated that the high performance GMR magnetic sensor technology will have wide applications in both DoD and commercial systems. The new low cost GMR oxide sensors will be strong contenders for applications now served by inductive recording read heads, Hall sensors, and AMR bridge sensors.