SBIR/STTR Research Award

Ferrite/TBa2Cu3O7-x Thin Film Structure by Metalorganic Chemical Vapor Deposition for Low Loss Microwave Devices

Award identifier 400c22082375c4a5d0519099dda32e652bcab47057e9be8ec8bed935bfcae66aAwarding agency Department of Defense · Missile Defense Agency

Award amount

$59,991

Program and phase

SBIR · Phase I

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
NZ APPLIED TECHNOLOGIES CORP.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Microstrip-geometry phase shifters have had limited use at microwave frequencies because of high insertion loss resulting from resistance in the metal conductors. With the use of YBCO meanderline circuits in a glue contact with a magnetized ferrite substrate nonreciprocal differential phase shift in excess of 1000 degree/dB has recently been demonstrated by a group at MIT Lincoln Labs. Such a contact method is unacceptable for production quality control and for survival in a deployed environment. Based on our extensive experiences in growth of high-quality YBCO thin films and recent successes with thick nickel ferrite film growth, NZAT propose to demonstrate the feasibility of MOCVD processing for fabrication of ferrite/YBCO thin film structure phase shifters. Development of an effective buffer layer between ferrite and superconducting layer will be part of the effort to realize this multilayer device. It is projected that optimization of the meander line ferrite phase shifter could result in figure-of-merit values that approach 10000 degree/dB, which is more than an order of magnitude higher than those produced by a waveguide ferrite phase shifter. Production of the superconducting phase shifter by a cost effective process satisfies the phased array need for low cost, low weight, small size and low power consumption. Such a capability would be useful for the integration of ferrites with semiconductors in a planar technology mnd for the fabrication of other technically important complex oxides.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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