SBIR/STTR Research Award

HIGH SECONDARY-ELECTRON YIELD SURFACES BY ION BEAM PROCESSES

Award identifier eb6fa60c63565ec53bd99ad8f99746b1d3675473fe4c56ada2d8e0bb0d1f400cAwarding agency Department of Energy

Award amount

$50,000

Program and phase

SBIR · Phase I

Award year

1988

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Spire Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
RG46KJGARZF4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

HIGH YIELD SECONDARY-ELECTRON SURFACES HOLD PROMISE FOR IMPROVED ELECTRON-MULTIPLYING DEVICES SUCH AS PHOTOMULTIPLIERS AND MICROCHANNEL PLATES. ION IMPLANTATION AND ION BEAM MIXING OFFER A DIRECT MEANS OF ALLOYING LOW WORK-FUNCTION ELEMENTS INTO THE NEAR SURFACE REGION OF SUBSTRATES. PRELIMINARY WORK HAS SHOWN PROMISE, AND THIS PROJECT WILL TEST THE FEASIBILITY OF PRODUCING STABLE, LONG-LIVED, LOW WORK-FUNCTION SURFACES BY ION BEAM ENHANCED DEPOSITION AND ION BEAM MIXING OF SELECTED ELEMENTS (E.G., MG, CA, AND SR) INTO ELECTRON-EMITTING SURFACES.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Energy

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