SBIR/STTR Research Award

MULTI-GIGAHERTZ BANDWIDTH HIGH PINOUT DENSITY WAFER PROBE

Award identifier daf30aa19f9125084854474bb5b5e4aaf42196e7968552dc6ac32d14efce3404Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$49,866

Program and phase

SBIR · Phase I

Award year

1989

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
Cascade Microtech, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

A MEMBRANE TYPE WAFER PROBE IS PROPOSED WHICH, AT THE END OF PHASE II, WILL ACHIEVE TRANSMISSION OF SIGNALS FROM TESTER TO DIE WITH LOW ABBRATIONS FOR A 100 PS RISETIME. CAPABILITIES WILL INCLUDE LOW-IMPEDANCE GROUND AND POWER CONTACTS, WITH LSI-LEVEL NUMBERS AND DENSITIES OF SIGNAL LINES. PHASE I WORK WILL DETERMINE THE DESIGN PARAMETERS NECESSARY FOR THESE GOALS THROUGH A SEQUENCE OF CALCULATIONS, SCALE MODELLING, AND PROTOTYPE FABRICATION AND TESTING.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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