SBIR/STTR Research Award

Precision Engineered Resistor Arrays from Band-gap Engineered Materials

Award identifier 31ccf471abdfd9142fe8abc2c229b673a1e8f77a4ac688a56fe268df5c6760a8Awarding agency Department of Defense · Missile Defense Agency

Award amount

$650,000

Program and phase

SBIR · Phase II

Award year

1998

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Nanomaterials Research LLC
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The performance of existing resistors is unsatisfactory for high frequency, small foot print, low noise electronic and communication applications. These technology limitations can be addressed with resistors prepared from proprietary band-gap engineered, near-molecular scale materials. This project, during Phase I, will establish the proof-of-concept that commercially useful resistor arrays can be prepared from near-molecular scale materials. Phase II effort will seek to optimize and produce array prototypes. Phase III will commercialize the technology. Proposed research will build the foundation for a whole new family of molecular electronic devices. Potential specific applications include launching of resistors and resistor arrays that are needed for HF, VHF, UHF, and radio frequency electrical, electronic, and communication circuits. The technology will be timely for the anticipated market trend towards miniaturization of electronics to nanometer feature size.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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