Hybrid semi-insulating SIC wafers

"Researchers at Astralux, Inc. propose to develop hybrid semi-insulating SiC wafers using a novel technique. Specifically, our overall goal is to commercialize epi-ready 3-inch and 4-inch 4H and 6H SiC wafers for the emerging wide bandgap microwave devicemarket. The hybrid SiC wafers are deemed complementary to the existing bulk SiC wafers, and the value added is to increase the production volume and significantly reduce the cost of larger-area semi-insulating SiC substrates with a minimum of defects.During Phase I, researchers at Astralux will demonstrate 35-50 mm hybrid SiC prototypes with an application demonstration. An important feature of this program is to work closely with an AlGaN HEMT manufacturer who in Phase I will test our substrates bygrowing and characterizing III-V nitride epitaxial layers and later provide device correlation efforts in Phase II. The epitaxy and devices will be benchmarked and compared to equivalent epitaxy and devices on conventional substrates. The availability ofaffordable and high quality 3 and 4-inch semi-insulating SiC wafers is crucial for SiC and III-V nitride power transistor manufacturing."