SBIR/STTR Research Award
Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems
Award amount
$70,000Program and phase
STTR · Phase IAward year
2002Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- SemiSouth Laboratories
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight in satellite systems. SemiSouth Laboratories, Inc. plans to transfer critical JFET IC technology developed at Mississippi State University to prototype status, and work with key DoD customers to provide earlyadaptation of the technology. Will further SiC I.C. development, especially in integrated control electronics which are needed for high-temperature sensors and power modulators under distributed control.
Technology keywords
Not reported