SBIR/STTR Research Award

Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award identifier 74376d1407017a2314ee5df0cf12ecabeb7a67a404c6af56581fa855606cc4d0Awarding agency Department of Defense · Missile Defense Agency

Award amount

$70,000

Program and phase

STTR · Phase I

Award year

2002

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
SemiSouth Laboratories
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight in satellite systems. SemiSouth Laboratories, Inc. plans to transfer critical JFET IC technology developed at Mississippi State University to prototype status, and work with key DoD customers to provide earlyadaptation of the technology. Will further SiC I.C. development, especially in integrated control electronics which are needed for high-temperature sensors and power modulators under distributed control.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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