High Power, Modulation Doped AlGaN/GaN FETs

Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk substrates of 50mm diameter will be made possible with Cermet's proven crystal growth technology. The growth of nitride heterostructures will be provided by a world leader in nitride film growth and power devicetechnology. Device-quality films will be grown and characterized by Cermet's university partner. Additionally, FET device design and characterization will be enhanced by this nitride expert. The successful completion of Phase II goals will demonstrate theutility of Zno substrates in the fabrication of nitride power devices, and lead to viable, high power, nitride FETs for military applications, as well as rf devices and consumer electronics. This proposed work will provide the technology basis for a moreeffective nitride FET fabrication process, more effective thermal management, and more efficient operation. Defense systems, automotive, and commercial aviation, and commercial communication industries will benefit from this technology.