SBIR/STTR Research Award
BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES
Award amount
$99,995Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Advanced Technologies/Laboratories Intl
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-Packard. In Phase III, the LEDs will be commercialized and the technology will be extended to GaN based electronics and lasers.
Technology keywords
Not reported