A New Dual-Gated MCT (DMCT) for Hybrid Electric Power Systems

The MCT is a giant leap forward in power device technology but problems have been reported with RBSOA (Reverse Biased Safe Operating Area), current filamentation and yield, especially when scaling to larger areas, higher currents, and higher blocking voltages. These problems will be addressed in this proposed work by the design and construction of a power module containing a Dual-gated MCT or "DMCT." The DMCT will be provided with a distributed gate and ballasted emitters. MCT device technology will be improved by enabling the control of ballasted anode and cathode emitters by unique "solder bump" chip packaging techniques. The long emitters will use techniques to promote homogenous current sharing over the entire emitter. The proposed "DMCT" will be designed for optical and electrical turn on triggering and will use optimized DMOS FETs and IGBTs in the proposed module for turn on and turn off. The DMCT without the FET controller chips will be useful as a unique Dual-gated GTO which will be called the "DGTO" in this proposal.