SBIR/STTR Research Award

High Power, High PRF, Diffraction-Limited Diode Laser Source at 1.54 um

Award identifier 1b9cf23e9208a802731bcffa6742e6d59fd1de573b65c34df4f549e0709406e6Awarding agency Department of Defense · Air Force

Award amount

$78,425

Program and phase

SBIR · Phase I

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
SDL Inc
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

SDL, Inc. proposes to develop a high power, high pulse repetition frequency (PRF), diffraction-limited laser source at l.54 um for use in eyesafe laser radar and seeking applications. Using flared amplified technology and materials for eyesafe wavelength, the packaged device will exceed the desired system requirements of l0 nsec pulses at .20 KHz. the output is a single lobed, Gaussian, diffraction-limited radiatin pattern approximately 0.77 mrad (0.044 degrees) in angular divergence and <0.l nm in linewidth. The development of the proposed device combines several high-power materials and device technologies that have been developed at SDL. The result of this effort will be a device capable of unprecedented diffractionlimited power levels from a semiconductor source at eyesafe wavelengths. The operating wavelength of this device will be easily extendable to wavelengths up to 2 um for eyesafe military and commercial applications.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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