SBIR/STTR Research Award
High Power, High PRF, Diffraction-Limited Diode Laser Source at 1.54 um
Award amount
$78,425Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- SDL Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
SDL, Inc. proposes to develop a high power, high pulse repetition frequency (PRF), diffraction-limited laser source at l.54 um for use in eyesafe laser radar and seeking applications. Using flared amplified technology and materials for eyesafe wavelength, the packaged device will exceed the desired system requirements of l0 nsec pulses at .20 KHz. the output is a single lobed, Gaussian, diffraction-limited radiatin pattern approximately 0.77 mrad (0.044 degrees) in angular divergence and <0.l nm in linewidth. The development of the proposed device combines several high-power materials and device technologies that have been developed at SDL. The result of this effort will be a device capable of unprecedented diffractionlimited power levels from a semiconductor source at eyesafe wavelengths. The operating wavelength of this device will be easily extendable to wavelengths up to 2 um for eyesafe military and commercial applications.
Technology keywords
Not reported