Organometallic Monomer Precursors and Intrafilm Annealing for a LiNbO3 Crystal Film Production

A feasibility study of a new route to the formation of crystalline films of the ferroelectric LiNbO3 is proposed. Two aspects of the proposed route are unique in themselves and, combined, should permit the development of a low temperature, scalable production process, to make electronic grade LiNbO3 more widely available to the integrated circuit (IC) industry. Preparation and reaction of novel volatile or metallic alkoxide monomer precursors in CVD and sol-gel process experiments are described. Three approaches to highly localized, intrafilm annealing are also outlined. Each seeks to minimize heat transport to the silicon substrate during the annealing step required to form the crystalline LiNbO3 from a film deposited by a CVD or sol-gel process. These include rapid high-energy pulsed laser annealing, localized microwave annealing on a deposited sol-gel layer and a chemical exothermic reaction within the sol-gel derived film.