SBIR/STTR Research Award

Reduced Parasitic Lasing in Ti:Sapphire Lasers: Removing a Bottleneck to New Ways of Acceleration

Award identifier 35715421b966e3b2f2313b36b826adbdbd61e39f454e03297969d0e31e720f9dAwarding agency Department of Energy

Award amount

$749,923

Program and phase

SBIR · Phase II

Award year

2008

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Crystal Systems, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
DE-PS02-06ER06-30
Topic code
31

Research abstract

New, ultra-fast, ultra-intense solid state lasers can be efficient sources of accelerated particle beams in applications ranging from high energy physics research to real world medical applications. Parasitic lasing represents a severe bottleneck to scaling up this new technology. Removing this bottleneck will open up a range of applications of these compact lasers, efficiently bringing accelerator technology to a real world problems. Parasitic lasing is being reduced by a series of growth and post-growth treatments, to ultimately allow production of large Ti:sapphire crystals without parasitic lasing for laser applications. Commercial Applications and other Benefits as described by the awardee: During the Phase I, treatments of laser crystals were developed to form layers that would stop parasitic lasing. One of these treatments was applied to a large, high-power laser crystals and this crystal was successfully used in a real high power system at Lawrence Berkeley National Laboratory. Better ways to limit parasitic lasing were developed with smaller scale rods. The techniques evaluated in Phase I will be developed further and scaled up in Phase II. After the treatments are optimized, they will again be applied to a large-scale real laser rod, and tested in a high power system for reduced parasitic lasing, and thus higher output power.

Technology keywords

Not reported

Agency intelligence

Department of Energy

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