GaInAsSb Infrared Laser Diodes

There is much need for lasers with emission wavelengths in the mid-infrared (2 to 5 microns) for applications that include molecular spectroscopy, environmental and atmospheric trace gas analysis, long haul fiber communications, laser surgery, and atmospheric free-space laser transmission. The Lebedev Physical Institute in Moscow has reported double heterostructure GaInAsSb/GaAlAsSb lasers emitting at 300 K in the wide wavelength range of 1.8 to 2.4 microns. These devices were fabricated by liquid-phase epitaxy on GaSb substrates. They represent some of the longest emission wavelengths ever reported for uncooled semiconductor injection lasers. To our knowledge, neither this approach, nor similar work, is being pursued in the United States. We aim to apply our expertise in the liquid-phase epitaxy of GaSb-based materials to producing low-cost, high performance GaInAsSb/GaAlAsSb injection lasers. It is our objective to match and improve upon the work of the Russian group, in which case we would be the sole U.S. source for this type of mid-range wavelength semiconductor injection laser. Furthermore, we have developed proprietary epitaxy technologies, previously applied to AlGaAs optoelectronic devices, that should prove very advantageous for GaSb-based lasers, and in particular, for the realization of surface-emitting long-wavelength lasers. Production of low-cost, high-performance mid-infrared GaInAsSb lasers with applications to long-haul optical communications using fluoride fibers, trace gas analysis by molecular spectroscopy for environmental and atmospheric sensing, laser surgery, and atmospheric transmission of laser signals.