GA AS BY LIQUID PHASE ELECTROEPITAXY IN GALLIUM BISMUTH SOLUTION

THE OVERALL OBJECTIVE OF PHASE I OF THIS INNOVATIVE MATERIALS RESEARCH PROGRAM IS TO DEVELOP A HIGH QUALITY, ADVANCED SEMICONDUCTOR MATERIAL, WHICH IS CURRENTLY NOT AVAILABLE TO THE GOVERNMENT OR THE COMMERCIAL MARKETPLACE, USING A VARIATION OF THE LIQUID PHASE ELECTROEPITAXY (LPEE) GROWTH TECHNIQUE. THE SPECIFIC GOAL IS TO ESTABLISH THE ADVANTAGES OF THE LPEE PROCESS FOR PRODUCTION OF BULK SINGLECRYSTALS OF GAAS USING A GA1-XBIX MELT INSTEAD OF A GA MELT AS A SOLVENT. IT IS STRONGLY SUSPECTED THAT THIS RESEARCH APPROACH WILL LEAD TO SIGNIFICANTLY ENHANCED SEMICONDUCTOR MATERIALS FOR GOVERNMENT AND COMMERCIAL DEVICE MANUFACTURERS. THE SUCCESSFUL COMPLETION OF THE PHASE I AND II EFFORTS WILL PROVIDE A REVOLUTIONARY HIGH QUALITY MATERIAL FOR A WIDE RANGE OF GOVERNMENT AND COMMERCIAL APPLICATIONS FAR INTO THE 21ST CENTURY. THIS WOULD DIRECTLY PROVIDE TECHNOLOGICAL AND ECONOMIC BENEFITS TO THE NATION.