SBIR/STTR Research Award

Transpinnor Electronics for a Mass Memory without Semiconductors

Award identifier 109f04b288e31637daa3f6a4843a700327462a56b8033439a4f97460d9094314Awarding agency National Aeronautics and Space Administration

Award amount

$600,000

Program and phase

SBIR · Phase II

Award year

2001

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
INTEGRATED MAGNETOELECTRONICS
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The proposer (IME) is developing general-purpose electronics based on giant magnetoresistance (GMR). Underlying IME's all-metal electronics is the transpinnor, a novel device that shows amplification and either logic or linear characteristics. IME has designed and fabricated several transpinnor-based logic gates and simple linear circuits, which are being tested. The Phase 1 project objectives are to demonstrate all-metal GMR electronics for selection, amplification and logic in an all-metal magnetic RAM. A mask set will be designed and made for the required support circuitry,which will then be fabricated and tested. The proposed Phase 1 project will enable a nonvolatile, rad hard, all-metal (no semiconductors) RAM with nondestructive readout and fabricated in a single process. In a GMR RAM with semiconductor support electronics, the support circuitry and memory array are manufactured in separate processes.

Technology keywords

Not reported

Agency intelligence

National Aeronautics and Space Administration

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