SBIR/STTR Research Award
Transpinnor Electronics for a Mass Memory without Semiconductors
Award amount
$600,000Program and phase
SBIR · Phase IIAward year
2001Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- INTEGRATED MAGNETOELECTRONICS
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The proposer (IME) is developing general-purpose electronics based on giant magnetoresistance (GMR). Underlying IME's all-metal electronics is the transpinnor, a novel device that shows amplification and either logic or linear characteristics. IME has designed and fabricated several transpinnor-based logic gates and simple linear circuits, which are being tested. The Phase 1 project objectives are to demonstrate all-metal GMR electronics for selection, amplification and logic in an all-metal magnetic RAM. A mask set will be designed and made for the required support circuitry,which will then be fabricated and tested. The proposed Phase 1 project will enable a nonvolatile, rad hard, all-metal (no semiconductors) RAM with nondestructive readout and fabricated in a single process. In a GMR RAM with semiconductor support electronics, the support circuitry and memory array are manufactured in separate processes.
Technology keywords
Not reported