Novel Auger Transistors

Epitaxial Technologies proposes to develop innovative material structures for Auger transistors that can be used for millimeterwave oscillators. We will achieve this objective by performing device designs to determine suitable material structures and epitaxial growth processes. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of Auger transistors by developing techniques for growing antimony and sulphide based heterostructures using molecular beam epitaxy (MBE) and projecting the oscillator performance that can be realised from Auger transistors through material and device designs. In Phase II, we will further optimize the material structures and design and fabricate Auger transistors and millimeterwave oscillators based on them.