CUSTOM MULTIELEMENT P-I-N DETECTOR SYSTEMS

U. S. SEMICONDUCTOR TECHNOLOGY FOR DEVICE FABRICATION IS HIGHLY DEVELOPED, BUT IT IS NOT WELL COUPLED TO THE NEEDS OF THE DOE HIGH ENERGY PHYSICS PROGRAM. THE RESEARCH PROPOSED HEREIN WOULD ADDRESS THAT PROBLEM BY PUTTING US IN A POSITION TO CREATE (UNDER PHASE 2) A COMMERCIAL INTERFACE BETWEEN THE HIGH ENERGY PHYSICS COMMUNITY AND U.S. INDUSTRIAL SEMICONDUCTOR TECHNOLOGY. THE PROPOSED RESEARCH RESEARCH INVOLVES THE DEVELOPMENT OF THE TECHNICAL CAPABILITY NEEDED TO DESIGN AND SUPPLY SEMICONDUCTOR DETECTORS TAILORED TO HIGH ENERGY PHYSICS APPLICATIONS. P-I-N DIODE TECHNOLOGY WOULD BE EVALUATED AS THE BASIS FOR VERSATILE CUSTOM HIGH ENERGY PARTICLE DETECTOR APPLICATIONS AT LARGE ACCELERATORS. A MICROCOMPUTER CONTROLLED CAMAC TEST SYSTEM WOULD BE ASSEMBLED FOR USE IN DETECTOR PERFORMANCE TESTS. WE WOULD RELATE DETECTOR PERFORMANCE LEVELS TO WAFER PROCESSING AND DEVICE FABRICATION STEPS. RELEVANT RESULTS OF DOE SUPPORTED RESEARCH ON HIGH ENERGY PARTICLE DETECTORS WOULD BE INCORPORATED AND THEREBY BROUGHT INTO COMMERCIAL APPLICATION IN ACCORD WITH SBIR GOALS. PROBLEMS ASSOCIATED WITH COMMERCIAL FABRICATION OF CALORIMETRIC SEMICONDUCTOR DETECTORS FOR USE IN HIGH ENERGY PHYSICS EXPERIMENTS WILL BE ANALYZED AS A SPECIFIC EXAMPLE. PHASE 2 WOULD INVOLVE R&D RELATED TO COMMERCIAL FABRICATION OF THESE DETECTORS AND A BROADER RANGE OF CUSTOM DETECTORS USING P-I-N TECHNOLOGY IF THAT IS DEEMED FEASIBLE.