Silicon-on-Diamond Structures for SOI Devices

Silicon-on-Insulator technology is a basis for fabrication of microelectronic devices with faster performance and better radiation tolerance. By using diamond, with thermal conductivity higher than that of any other materials, as the insulator of the SOI structure, even faster radiation tolerant devices able to operate at much higher power levels will become possible. This program involves experimental evaluation of a concept for fabrication of silion-on-diamond material structures with thin uniform layers of low defect density single crystal silicon on insulating diamond film bases. Quality of the silicon layers for device purposes and prospects for production are to be evaluated.