Crested Tunnel Barriers for Fast, High Density, Nonvolatile Memory Devices

Crested multi-layer tunnel barriers have been proposed, which offer a revolutionary solution to overcome density to speed trade-offs characteristic of present data storage technologies. Practical implementation of the proposed technology will involve useof thin film materials which are readily manufacturable and CMOS-compatible. A critical need exists for experimental verification of the theoretical predictions regarding these advanced structures. In addition, challenges lay ahead in developing asuitable deposition technology for fabrication of the ultra-thin graded or multilayered structures involved. Advanced Fuel Research, Inc., and the State University of New York at Stony Brook will develop a technology for fabrication of crested tunnelbarrier devices based on promising thin film material combinations. Phase I will demonstrate barrier tunneling in asymmetric, two-layer barrier structures in good agreement with theoretical predictions. Phase I will also conduct a study to assesscritical manufacturing issues such as suitable deposition methods required for fabrication of the ultrathin layer crested barrier devices in a production environment. Phase II will support continued theoretical development, develop scalable depositionprocesses, and demonstrate prototype memory devices.Successful development of the proposed high density, fast memory technology will have immediate impact in portable electronic components that require low cost, minimal power consumption, nonvolatilememory, i.e. flash memory. As the demand for increased memory and functionality continues, faster, higher density flash memory technology will be required. It is expected that a fast, high density, low power, nonvolatile memory technology will alsocompete with DRAM technology presently used in personal computers. The commercial potential is enormous, with both flash memory and DRAM representing multi-billion dollar per year markets.