SBIR/STTR Research Award
Wide Bandgap Heterojunction Bipolar Transistors for X-Band Operation
Award amount
$460,000Program and phase
STTR · Phase IIAward year
2001Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The objective is to develop GaN/4H-SiC HBTs which were demonstrated for the first time in Phase I. These novel HBTs will developed for microwave applications. More specifically, the performance goal is a GaN/SiC heterojunction bipolar transistor (HBT) withan exceptionally high power density of 10 W/mm (of emitter stripe width and transit frequency much greater than 20 GHz for amplifiers in satellite base stations, microwave radar transmitters, and wireless communications. Optimization of base and emitterparameters and fabrication will achieve the required transit frequency and maximum oscillation frequency for 20 GHz operation at high power density, high power added efficiency, and low noise.
Technology keywords
Not reported