SBIR/STTR Research Award

Amorphous, Silicon-Based Neutron Detector

Award identifier 949ee9c6fadb7062d3bab927e2aaca658e972b57405b81af676d955d99794d8dAwarding agency Department of Energy

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Midwest Optoelectronics, Llc
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

73209S03-I Various large-scale neutron sources, including those already built or to be constructed, are important for materials and life science research. For all these neutron sources, neutron detectors are a very important aspect. However, a high-performance and low-cost neutron beam monitor, that provides time and temporal resolution, is lacking. This project will develop a pixilated, reliable, durable, fully-packaged neutron detector. The device will be based on an amorphous silicon material, will use a double-junction p-i-n/n-i-p design to provide X-Y pixilation, and will be fabricated using a high-yield, low-cost method. Phase I will fabricate a proof-of-concept neutron beam monitor for neutron detection, using ECVD/Evaporation/Sputtering for various semiconductor junction and metal contacting layers. A boron layer will be evaporated on top of the layered structure to convert neutrons into alpha particles, which could be detected by a Si-based p-i-n diodes. Commercial Applications and Other Benefits as described by awardee: The technology should lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all neutron facilities worldwide. In addition, the technology could be used to develop X-ray and neutron monitors for future use in security checks at airports and other critical facilities.

Technology keywords

Not reported

Agency intelligence

Department of Energy

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