SBIR/STTR Research Award
Stability and Support Operations Visualization Aid (SASOVA)
Award amount
$746,496Program and phase
SBIR · Phase IIAward year
2001Award details
- Awarding agency
- Department of Defense
- Branch
- Office of the Secretary of Defense
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Sterling Semiconductor (Sterling) has developed an epitaxial growth method that drastically reduces the defect density in off-axis 4H-SiC. In repsonse to the Office of Scientific Development SBIR topic OSD099-03, Sterling proposes a 24-month, $750K PhaseII SBIR program to further develop this technology for use in silicon carbidc (SiC) devices. Laterial vapor-phase epitaxial growth (L-VPE) will be used to grow over substrate defects such as micropipes and elementary screw dislocations and remove themfrom the active device area. Diodes and thyristors will be processed with guard ring edge termination to evaluate and improve the performance of L-VPE. Evaluation of these devices will help us to determine the causes of breakdown in SiC devices. Theproposed program will accelerate the insertion of SiC devices into DoD, utility, automotive, and industrial power applications.
Technology keywords
Not reported