Programmable Multi-Wavelength Detector Array

Epitaxial Technologies proposes to develop the enabling material technology for the fabrication of programmable multi-wavelength photodetector arrays. We will perform material and device design to determlne suitable material structures and epitaxial wafer growth processes. We will investigate the use of compound semiconductor structures lattice matched to InP. The main goal of this proposed Phase I effort is to demonstrate the feasibility of multi-wavelength detector arrays by developing techniques for growing multi-wavelength material structures using Mblecular Beam Epitaxy (MBE) and demonstrating through material and device design the performance enhancements and cost reductions that can be expected from multi-wavelength detector arrays. In Phase II of the proposed project, we will further optimize the material structures and design and fabricate detector arrays (in collaboration with a manufacturer of photodetectors) with wavelength response from W (0.2 micron) to the infra-red (10 micron) on the same die. This effort will result in two products: programmable multi-wavelength detector array chips and the epitaxial wafers for producing them. The proposed detector arrays will be applicable in military applications such as night vision imaging, sensor fusion and fiberoptic communications and control for C4I. Civilian applications include collision avoidance and infra-red imaging.