Efficient Dopant Activation In P-type III-V Nitrides

THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPMENT OF THESE MATERIALS. IN PHASE I WE WILL DEMONSTRATE REPRODUCIBLE, EFFICIENT P-TYPE DOPING TECHNOLOGY FOR III-V NITRIDES. OUR APPROACH ADDRESSES THE TWO MAIN FACTORS AFFECTING P-TYPE DOPING, STRUCTURAL FACTORS RESULTING FROM LATTICE MISMATCH AND CHEMICAL FACTORS DUE TO DOPANT INTERACTION IN THE SOLID GROWTH. ATM'S UNIQUE EXPERTISE IN SUBSTRATES AND MOCVD PROCESSES PROVIDE SOLUTIONS TO THESE PROBLEMS. THE PHASE II PROGRAM WILL UTILIZE THESE TECHNIQUES TO PRODUCE EFFICIENT BLUE LEDs AND LASERS FOR COMMERCIALIZATION IN PHASE III.