IMPROVED SIMOX SOI BY INDEPENDENT CONTROL OF BEAM CURRENT DENSITY AND WAFER IMPLANT TEMPERATURE

THE BUILT-IN BURIED OXIDE OF SIMOX SOI MATERIAL HAS PROMOTED RECENT ADVANCES IN RADIATION-HARDENED, AEROSPACE, AUTOMTIVE, AND COMMUNICATIONS APPLICATIONS. A SIGNIFCANT ISSUE RELATED TO THE USE OF SIMOX TECHNOLOGY IS THE CAPABILITY OF THE SI AND BURIED OXIDE LAYERS TO SUPPORT ADBANCED CMOS AND BIPOLAR CIRCUITRY. RECENT TECHNIQUES FOR SILICON AND BURIED OXIDE DEFECT DENSITY MEASUREMENTS SHOW THAT FURTHER IMPROVEMENTS ARE NECESSARY TO ASSURE ADVANCED CIRCUIT YIELDS. THE EXPERIMENTS PLANNED FOR THIS PROGRAM CAPITABLIZE ON THE FIRST OPPORTUNITY TO APPLY TOTALLY INDEPENDENT CONTROL OF OXYGEN ION BEAM CURRENT PARAMETERS AND WAFER TEMPERATURE DURING IMPLANATATIN. THE PROGRAM IS STRUCTURED TO OPTIMIZE IMPLANT PARAMETERS FOR REDUCED SILICON AND BURIED OXIDE DEFECTS. THE PROPOSED PROGRAM IS PREDICTED TO RESULT IN THE IMPROVED CAPABILITY OF ADVANCED CIRCUITRY SYSTEMS FOR THE ABOVE FIELD APPLICATIONS.