P-Type Copper Oxide Based Transparent Conducting Oxides

Recently, researchers at Tokyo Institute of Technology announced that they had succeeded in forming a p-type CuO- X based transparent and conductive material. Heretofore, transparent (wide bandgap) conductive oxides have been predominantly n-type. We, ourselves, have been highly successful in producing a variety of n-type highly conductive, highly luminescent and near epitaxial oxide films. If p-type transparent oxides can be repeatable and economically reproduced, a great variety of new, wholly transparent applications opens up, including diodes, transistors, photovoltaics, sensors, p-type semiconductor contact layers, and luminescent devices. We herein propose, in Phase I, to perform a rapid proof of principle materials deposition and materials characterization study. Depositions of doped and undoped CuO:Ga will be made in our MOCVD reactor and films will be characterized by Hall, PL, Raman, and other techniques. If we are successful in producing p-type materials in Phase I, we will focus on refining materials and processes and producing wholly transparent p-n heterostructure diode devices in Phase II. Development of wide bandgap p-type transparent conductive oxides, combined with existing n-type transparent conductive oxides could expand and generate several markets, including those of diode, transistors, wholly transparent displays, UV/ blue emitters and detectors, and so on. Market leadership will result from materials capabilities.