EVALUATION OF HETEROJUNCTION INTERFACES USING ELECTRO BEAM ELECTROREFLECTANCE

IN PHASE I, THE INITIAL CHARACTERIZATION OF ELECTRONIC STRUCTURE AT ALGAAS/GAAS INTERFACES BY ELECTRON BEAM ELECTRO-REFLECTANCE (EBER) IS PROPOSED, SPECIFICALLY FOR THE INVESTIGATION OF QUANTUM WELL AND HEMT STRUCTURES. THESE INTERFACES HAVE BEEN STUDIED BY RELATED TECHNIQUES, AND HAVE BEEN SHOWN TO POSSESS UNIQUE SPECTRAL FEATURES. NONETHELESS, BOTH FUNDAMENTAL AND APPLIED QUESTIONS REMAIN ABOUT THE PHYSICAL PARAMETERS OF THESE SYSTEMS. THE PHASE I WORK WILL DEMONSTRATE THE APPLICABILITY OF EBER TO ANALYSIS OF THESE PROBLEMS. FOR THIS PURPOSE, WE WILL EXAMINE THE ELECTRONIC LEVELS ASSOCIATED WITH SINGLE QUANTUM WELLS, USED IN LASER DEVICES, AND SINGLE HETEROJUNCTION INTERFACES, CHARACTERISTICS OF HEMT DEVICES. OUR OBJECTIVE IS TO OBSERVE AND PARAMETRIZE THE ADDITIONAL SPECTRAL FEATURES OF THESE INTERFACES, USING EBER.