SBIR/STTR Research Award
GROWTH OF GAN SINGLE-CRYSTAL BOULES
Award amount
$58,184Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- ASTRALUX, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- HJG2RTMJ9BE4
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN boules will be tested on a small scale: to produce cm3-sized crystals. The process will be scles up during Phase II, leadin gto commercial production within two years. A similar technique can be used to generate other nitrides in single-crystal form: A1N, InN, TiN, ErN, and possible their alloys.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- SBIR Phase I: Improved X-band T/R Modules for High-Temperature/Power Operation
- SBIR Phase I: Advanced Manufacturing of Hybrid Wafers and Devices
- Portable E-beam Pumped UV/X-ray Bio-decontamination System
- Thermionic Conversion of Automotive Waste Heat
- Thermal Management via Hybrid Wafers and Devices
Research funding history
42 SBIR/STTR records share this UEI (1992–2007). Reported award amounts total $6,181,442. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Energy