Crested Tunnel Barriers for Fast, High Density, Nonvolatile Memory Devices

Crested multi-layer tunnel barriers have been proposed, which offer a revolutionary solution to overcome density to speed trade-offs characteristic of present data storage technologies. Practical implementation of the proposed technology will involve useof thin film materials that are readily manufacturable and CMOS-compatible. A critical need exists for experimental verification of the theoretical predictions regarding these advanced structures. In addition, challenges lay ahead in developing asuitable deposition technology for fabrication of the ultra-thin graded or multi-layered structures involved. Advanced Fuel Research, Inc. and the State University of New York at Stony Brook will develop a technology for fabrication of crested tunnelbarrier devices based on promising thin film material combinations. Phase I research demonstrated tunneling in thin film barrier structures in good agreement with theoretical predictions. Phase II will optimize material properties, develop processingtechniques for fabricating multi-layered crested barrier structures and demonstrate prototype memory devices employing the multi-layered crested barrier technology. Successful development of the proposed high density, fast memory technology will haveimmediate impact in portable electronic components that require low cost, minimal power consumption, nonvolatile memory, i.e. flash memory. As the demand for increased memory and functionality continues, faster, higher density flash memory technology willbe required. It is expected that a fast, high density, low power, nonvolatile memory technology will also compete with DRAM technology presently used in personal computers. The commercial potential is enormous, with both flash memory and DRAM representingmulti-billion dollar per year markets.