SBIR/STTR Research Award

High Power Mid-Infrared (2-10 Micron) Diode Laser Development

Award identifier df3100789b04209cebb369311a0b1763df785472ce1cb5dc019cf44fbe167ff9Awarding agency Department of Defense · Air Force

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
Aculight Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
WYAVK6MSRJ15
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Advanced IRCM lasers and systems, currently in development, require mid-infrared semiconductor lasers with very non-standard design parameters. The proposed effort will investigate the performance of commercially grown GaSb based materials and optimizetheir performance for use in unique laser transmitter designs, which will be directly traceable to future IRCM systems. The proposed mid-infrared laser technology has potential applications in spectroscopic gas sensing systems for environmentalmonitoring, explosive detection and industrial process monitoring sensors.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

139 SBIR/STTR records share this UEI (1992–2010). Reported award amounts total $51,359,198. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, Department of Health and Human Services, Department of Commerce, National Science Foundation

Agency intelligence

Department of Defense

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