Integrated Terahertz Transmit/Receive Modules

The Terahertz frequency band, from roughly 300 GHz through 10 THz, is often sited as the most scientifically rich, yet unexplored region of the electromagnetic spectrum. The major problem that continues to forestall the full exploitation of the terahertzband is the lack of compact, reliable and cost efficient terahertz sources and receivers. Previous research has shown that GaAs diode technology can be used for terahertz frequency transmit/receive modules, but the cost is prohibitive, the reliability ispoor and the frequency agility is limited. This SBIR proposal promises a radically improved T/R architecture based on the integration of GaAs mesas and the associated embedding circuitry on low-loss dielectric substrates. Such integration is the key toimproving electrical performance and greatly increasing power handling, while also creating a compact, highly reliable, and manufacturable technology. Phase I will end with a clear demonstration of the potential of this technology. A successful Phase IIprogram will culminate in the demonstration of militarily practical T/R modules in the terahertz frequency band.The integration of terahertz technology is the key to opening this region of the electromagnetic spectrum to military and commercialapplications. Successful completion of this SBIR research program will lead to militarily practical Teraherz components. These will find immediate application in laboratories throughout the US and Europe that strive to investigate and develop terahertzscience, technology and applications. The military applications of this technology will include communications systems (ultra-secure, ultra-broadband, satellite), bio/chem threat detection, collision avoidance radars that penetrate smoke and fog, spacecommunications, compact range radars, fuses for smart munitions and medical diagnostics.