FLASH ANNELLING OF ION IMPLANTED DOPING PROFILES FOR HIGH PERFORMANCE X-BAND GAAS POWER FETS

THIS PROGRAM WILL ADDRESS THE APPLICATION OF THE FLASH ANNEALING TECHNIQUE TO THE FABRICATION OF HIGH-PERFORMANCE ION IMPLANTED GAAS POWER FETS. THE DOPING PROFILE OF THE ACTIVE LAYER USED IN THESE MUST EXHIBIT A SHARP ACTIVE LAYER-SUBSTRATE INTERFACE SO THAT ABRUPT PINCH OFF CAN BE OBTAINED. THIS IS VERY IMPORTANT IN ORDER TO OBTAIN HIGH POWER OUTPUT CAPAVILITY AND EFFICIENCY, ESPECIALLY WHEN THE DC POWER IS THROTTLED DOWN. THE ABILITY OF THE FLASH ANNEALING IN PRODUCING SHARP DOPING PROFILES THROUG REDUCTION OF DIFFUSION DURING HIGH-TEMPERTURE PROCESSING WILL MAKE POSSIBLE HIGHER PERFORMING POWER FETS. THE PRECISE SYNTHESIS OF DOPING PROFILES WITH FLASH ANNEALING OF MULTIPLE ION IMPLANTATION WILL BE STUDIED. THE ENHANCEMENT IN PERFORMANCE SUCH AS POWER OUTPUT, EFFICIENCY, GAIN, AND DYNAMIC RANGE OF POWER FETS USING THESE DOPING PROFILES WILL BE DEMONSTRATED.