HIGH TEMPERATURE HEAT PIPE TECHNOLOGY

IN THE ELECTRONICS INDUSTRY THERE EXISTS AN EVER INCREASING DEMAND FOR ULTRA HIGH PURITY SINGLE CRYSTAL MATERIALS. THERMAL FLUXUATION IN THE FURNANCE DURING THE CRYSTAL'S GROWTH OR IMPURITIES WHICH REMAIN WITHIN THE CRYSTAL CAN DRASTICALLY EFFECT THE MORPHOLOGY AND INTURN, NEGATIVELY EFFECT THE MATERIALS ELECTRICAL CHARACTERISTICS. ACCORDINGLY, THERE EXISTS A STRONG INCENTIVE TO DEVELOP IMPROVED PROCESSES FOR THE GROWTH AND PURIFICATION OF SINGLE CRYSTAL MATERIALS FOR THE SEMICONDUCTOR INDUSTRY, PARTICULARLY IN THE MANUFACTURE OF GALLIUM-ARSENIDE, INDIUM-PHOSPHOROUS AND SILICON. A DEMONSTRATED EFFECTIVE APPROACH TO THE MANUFACTURE OF THESE AND OTHER SINGLE CRYSTAL MATERIALS IS THE USE OF A VERTICAL GRADIENT FREEZE FURNACE. THE USE OF A SERIES OF LIQUID METAL HEAT PIPES TO FORM THE FURNACE OFFERS THE POTENTIAL FOR SUBSTANTIAL IMPROVEMENTS IN THERMAL CONTROL OVER CONVENTIONAL DESIGNS, PARTICULARLY WITH THE HEAT PIPE'S NEAR ISOTHERMAL HEATING CAPABILITY.