4K x 4K and Larger Detector Arrays Sensitive in near UV with large well depth

The overall objective of this SBIR Phase I research project is to explore the feasibility of very high resolution CMOS APS image sensors intended for use in near ultraviolet imaging for atmospheric and Earth surface studies. Special attention will be paid to specifications dictated by NASA requirements, including pixel count, power consumption, array format, pixel design, and pixel size, with a specific focus on sensitivity in the near ultraviolet (300-400 nm). The effort in this research project has three specific technical objectives. The first one is to complete an architectural study for near ultraviolet (grayscale), large format CMOS APS image sensors tailored to NASA requirements. The second specific technical objective is the design and simulation of essential circuits required to enable the design of these image sensors. The third and final specific technical objective is to fully integrate a CMOS APS pixel array along with required periphery circuits. The integrated design will be verified and made ready for submission to the foundry for fabrication.