EFFICIENT NUCLEAR DELIVERY VECTOR FOR MACROMOLECULES

Not Available Silicon carbide (SiC) power transistors promise to provide higher power output with fewer, smaller devices because of the wide bandgap and high breakdown threshold of SiC. SiC bipolar junction transistors (BJTs) have received little attention due to apparent limitations of gain due ot device inefficiencies, ascribed to poor material properties. If the desired performance can be achieved, BJT's offer improved stability and higher power density than comparable field effect transistors (FETs). With only modest improvement in material properties and good esign practices, SiC BJT's for operation from 0.5-2.0 GHz can be designed. In this SBIR program Extreme Devices, in collaboration with HdB Engineering, proposes to design and fabricate high frequency (1-1.5 GHz) SiC BJT's using high power, ultra high frequency rf transistor design rules and Extreme Devices' novel supersonic molecular beam epitaxy process. The combination of device design coupled with the improved epitaxial doped SiC provided by supersonic beams will yield acceptable device performance. In Phase I demonstration SiC BJT transistors will be designed, fabricated and characterized. Phase II will design and fabricate large, high power devices and a prototype high power pulsed transmitter amplifier.