DEVELOPMENT OF INJECTION TECHNOLOGY FOR A HIGH REPETITION RATE POSITRON SOURCE

THE NEXT GENERATION OF COLLIDERS, BOTH LINEAR AND CIRCULAR, WILL REQUIRE POWERFUL, DEDICATED SOURCES OF POSITRONS IN ORDER TO ATTAIN LUMINOSITIES CONSISTENT WITH HIGH ENERGY PHYSICS GOALS. SUCH SOURCES RELY ON HIGH ENERGY ELECTRON BEAMS INCIDENT ON A HIGH Z TARGET TO PRODUCEPOSITRONS, AND YIELDS ARE IN THE RANGE OF 0.05 POSITRONS PER ELECTRON PER GEV. AS THE ENERGY OF THE INCIDENT ELECTRONS INCREASES, A CORRESPONDING INCREASE IN THE ENERGY SPREAD OF THE RESULTING POSITRON BEAM IS OBSERVED. AS IT IS DESIRABLE TO MINIMIZE THIS ENERGY SPREAD, INCREASING INCIDENT ELECTRON BEAM CURRENT IS PREFERRED OVER INCREASED ENERGY. IN COLLABORATION WITH THE CENTER FOR ADVANCED ACCELERATORS AT UCLA, SRL PROPOSES TO DEVELOP A HIGH INTENSITY ELECTRON SOURCE USING INDUCTION LINAC TECHNOLOGY WHICH WOULD SERVE AS THE INJECTOR FOR AN RF ACCELERATOR. THIS INTEGRATION OF RF-LINAC AND INDUCTION LINAC TECHNOLOGY SHOULD RESULT IN AN ADVANCED 210 MEV POSITRON SOURCE SUITABLE AS A LOW COST DEDICATED POSITRON INJECTOR FOR FUTURE COLLIDERS.