SBIR/STTR Research Award

DIAMOND HETEROEPITAXY USING NANOMETRIC SURFACE PREPARATION

Award identifier 6cb8a74cf9b7c62a62baea75d8b699669d8ef048233877b86c7aa5d99271c37aAwarding agency Department of Defense · Missile Defense Agency

Award amount

$58,676

Program and phase

SBIR · Phase I

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Crystallume/edi
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

One of the drawbacks of using single crystal diamond is the small size and expense of using natural diamond substrates. Single crystal natural diamonds are readily available in sizes up to 5 mm x 5 mm. For larger sizes the costs are prohibitive. These sizes are inconvenient to work with in terms of large scale fabrication of electronic devices. One solution to this problem is to be able to do diamond heteroepitaxy, i.e. grow single crystal diamond on alternate substrates. Another approach is to fabricate low coordination surfaces by using nanometric surface preparation. In this research program we propose the development of approaches for the heteroepitaxial growth of single crystals of diamond on metal substrates such as copper and molybdenum and on silicon using nanometric surface preparation.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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