Development of Lattice-Matched AlInN MBE Technology for UV Emitters and High Frequency Electronic Applications

"Cermet, in collaboration with researchers at Georgia Institute of Technology, propose to implement a lattice matched AlInN using existing substrate technology. The implementation of a lattice matched substrate promises to produce near dislocation freeAlInN heterojunction for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the development cycle. Specifically, we propose to use existing semiconductor substrates to grow lattice matchedAlInN by Molecular Beam Epitaxy to produce superior optoelectronic and electronic devices. The MBE technique to be employed will ensure a greater control over the composition of the metals in the AlInN. The target composition of AlInN will result in theoptimum wavelength (263nm) UV-emitters possible (ideal UV emitter wavelength preferred by DOD being 280nm), and should lead to reduced defect densities in transistor devices. Highly efficient vertical current LEDs and FETs will be demonstrated early inPhase II, based on the successful completion of Phase I objectives. The successful completion of Phase I goal will demonstrate the use of this technology to improve the performance of UV-Emitters, short wavelength LEDs, Laser Diodes, and other highfrequency electronic devices."