High Power Gallium Nitride HEMT Prepared by Ion Implantatio

Implant Sciences Corporation proposes to develop a superior power transistor design based on ion implanted nitride semiconductor materials which will be produced at Howard University. Our lateral device design features an inverted GaN channel with the AlGaN charge supply layer doped by ion implantation. Ion implantation allows selective area doping, which will let us create for the first time an undoped drift region at the drain which will allow high voltage switching. Because the undoped GaN channel supporting the two dimensional electron gas should feature a significantly higher mobility than can be round in SiC, and due to GaN's high breakdown field, we expect our high electron mobility transistor (KEMT) to easily out-perform present SiC high power/high temperature devices. We predict significant reductions in on-resistance, minimizing power dissipation. Implanting donor ions in the source and drain will also reduce series resistance. Processing requirements and packaging for our planar device design will be simplified compared to present vertical SiC devices such as UMOSFETs. Devices will be fabricated, tested, and compared with results in the literature. In Phase II we shall optimize the layer design and the implantation conditions to produce devices which can deliver high currents at 350 ¿C.