REVERSIBLE AND ADJUSTABLE SURGICAL CORRECTION FOR MYOPIA

Not Available This project will demonstrate the feasibility of forming precisely ordered and precisely located arrays of compound semiconductor quantum dots by first etching into the substrate an ordered array of boles with diameters comparable to the size of the quantum dots Sought and then depositing adatoms to fore one quantum dot in each hole by self-assembly. The methods to be used are extensions of precarious successful growth of ordered arrays of metal quantum dots by the authors. The periodic array of nanometer-sized holes until be defined by a biomolecular mask, and wi11 be transferred into the Si(100) substrate by Low Energy Electron Enhanced Etching (LE4) with no etch damage to the substrate. GaAs quantum tote will be grown in the etched holes by Molecular Beam Epitaxy (MBE). The effectiveness of clean H-terminated Si nanopatterned surfaces and of oxidized Si nanopatterned surface in producing GaAs quantum dots will be compared. The presence of quantum dot will be verified with Atomic Force Microscopy (AFT) and Transmission Electron Microscopy (TEA) in both plan and cross-section views. BENEFITS: This work will enable growth of compound semiconductor quantum dots without reliance and high-strain heteroepitaxial methods. Since this work achieves massively parallel processing in was' definition, etching. And quantum dot formation, it will enable routine manufacturing of dot arrays applicable to optical designs and single electron devices.