SBIR/STTR Research Award

Novel Low Cost Processes for Production of Crystalline Silicon Wafers for Photovoltaic Industry

Award identifier b072d42e78c99a4d0170a248dbf6d4f8c1763a30bc62117e6227769cc1d1b01bAwarding agency Department of Energy

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2005

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
GT Equipment Technologies, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
DE-FG02-06ER06-09
Topic code
28

Research abstract

78925B ¿Clean energy¿ is attracting more and more interest, which in turn exerts cost pressure on photovoltaic (PV) manufacturers for more efficient solar panel production. This project will develop a cost-effective technology to produce PV-grade silicon wafers. In particular, a reuseable crucible will be developed for the production of high purity, low oxygen content crystalline silicon ingots. The approach will be based on a therma-expansion-coefficient-matched graphite crucible and a high purity, multilayered release coating. Phase I will utilize the reusable crucible to design a rapid single-crystal growth technique for photocoltaic grade silicon. Commercial Applications and Other Benefits as described by the awardee: The technology should produce crystalline silicon with less oxygen and residual impurity, low dislocation density, and uniform electrical and mechanical properties, leading to increased overall cell efficiency at low cost.

Technology keywords

Not reported

Agency intelligence

Department of Energy

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