DEVELOPMENT OF A NEW VAPOR PHASE EPITAXY (VPE) TECHNIQUE TO PREPARE THE SEMICONDUCTOR - IN 0.53 GA 0.47 AS

HYDRIDE VAPOR PHASE EPITAXY (VPE) IS A WELL ESTABLISHED GROWTH METHOD FOR DEVICES SUCH AS INGAAS PHOTODETECTORS. RECENTLY, AN IMPORTANT SIMPLIFICATION OF THE METHOD WAS DEMONSTRATED IN WHICH IN-GA ALLOY SOURCES (INSTEAD OF SEPARATE IN AND GA METALS) WERE USED. FURTHERMORE, IT WAS DEMONSTRATED THAT INTENTIONALLY ADDED HCL COULD UNEXPECTEDLY PRODUCE TERNARY ALLOYS OF CONSTANT COMPOSITION. EPITAXX PROPOSES TO CONTINUE THE DEVELOPMENTS MENTIONED ABOVE AND SPECIFICALLY, A) TO FIND AN OPTIMAL IN-GA SOURCE ALLOY FOR REPRODUCIBLE GROWTH OF LATTICE MATCHED IN.(53)GA.(47)AS EPITAXIAL LAYERS, AND B) TO ASCERTAIN GROWTH CONDITIONS BY WHICH ADDED HCL WOULD CAUSE CONSISTENT GROWTH OF A LATTICE MATCHED ALLOY. EPITAXX PROPOSES TO DETERMINE THESE OPTIMAL CONDITIONS DURING PHASE I WITH THE HELP OF PROF. TIM ANDERSON (U. FLA). THE PHASE II PROPOSAL WOULD CONTAIN A DESIGN FOR A SIMPLIFIED VPE REACTOR WHICH UTILIZED THE PHASE I RESULTS. THE REACTOR WOULD BE BUILT AND OPTIMIZED DURING PHASE II AND DEVICES SUCH AS IN.(53)GA.(47)AS/INP APDS, 1660 NM LEDS, IN.(74)GA.(36)AS.(54)P.(46)/INP 1300 NM LASERS, IN.(8)GA.(2)AS/ INAS.(4)P.(6) DETECTORS FOR 2550 NM AND ROOM-TEMPERATURE DETECTOR ARRAYS FOR THE 1000 - 2500 NM REMOTE SENSING SPECTRAL BAND WOULD BE FABRICATED TO DEMONSTRATE THE SUCCESS OF THE TECHNIQUE.