SBIR/STTR Research Award

Rapid Thermal Annealing Process with Real-Time Monitoring for SiO2 Layer Formation

Award identifier 5230fd2403c0d8624d6ac82c33e755e1b92e057e57eacd0358334b9d0ae5de70Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$735,353

Program and phase

SBIR · Phase II

Award year

1995

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
ADVANCED FUEL RESEARCH, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
E7PVK58C6UJ5
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Future manufacturing of integrated circuits (IC's), will require analytical instrumentation that can provide on-line process monitoring linked to real time process control. Fourier Transform Infrared (FT-IR) spectroscopy can be effectively utilized to meet this need. As an example, Advanced Fuel Research, Inc. (AFR) has successfully employed simultaneous FT-IR reflection and emission spectroscopy to measure the sheet resistance of shallow junctions and the surface temperature during an anneal at elevated temperature (up to 950oC) on a 2 sec time scale. This project will develop the technology for microelectronics fabrication with on-line wafer-by-wafer characterization by FT-IR, and automated real-time process control. The objective of this Phase I project is to develop a contactless technology based on FT-IR emission and transmission spectroscopy to monitor SiO2 film production. The project will employ advanced FT-IR components developed specifically for process monitoring and proprietary software which measures film composition as well as thickness with imporved accuracy compared to present methods. This technique is also intended to monitor the presence of mechanical stress as well as substrate temperature. The proposed technology can be applied to improve both wafer quality, and yields for the production of epitaxial silicon, silicon oxide, silicon nitride, and polycrystalline silicon. In addition, FT-IR instrumentation, capable of real-time monitoring has extensive commercial potential for safety, health, and environmental applications (e.g., continuous emission monitoring, ambient air monitoring, and other process monitoring applications). This project will be led by the joint venture of AFR and ON-Line Technologies, Inc. (ON-Tech). Texas Instruments, Inc. (TI) will be a subcontractor. Phase I will prove the feasibility of data collection during the production of SiO2 films by Chemical Vapor Deposition (CVD) in a Rapid Thermal Processor (RTP). On-Tech will design an FT-IR measurement system. TI will fabricate calibrations samples. AFR will measure the ex-situ film characteristics, and develop the analysis method and software. On-Tech will design and construct the physical and optical interface

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

248 SBIR/STTR records share this UEI (1983–2021). Reported award amounts total $48,007,871. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Science Foundation, National Aeronautics and Space Administration, Environmental Protection Agency, Department of Commerce

Agency intelligence

Department of Defense

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