SBIR/STTR Research Award
ZnO Based Short Wavelength Laser
Award amount
$70,000Program and phase
SBIR · Phase IAward year
2003Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- CERMET, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Cermet, in collaboration with the Palo Alto Research Center, will fabricate and test a ZnO based semiconductor laser diode. Using Cermet's in house grown ZnO single crystal wafers, homoepitaxial films and epiwafers will be grown and characterized. Alaser diode will be designed with a prototype fabricated at the end of Phase II. The applications for a room temperature, ZnO p-n junctions, LEDs and laser diodes are vast. A transparent p-type conductor would be available to increase the efficiency ofestablished emitter and detector applications, including light emitting diodes, laser diodes, sensors / photodetectors, and photovoltaics. Additionally, a new family of transparent ZnO-based devices could be developed, including efficient UV/blue lightemitting diodes, sensors / photodetectors, and laser diodes.
Technology keywords
Not reported