SBIR/STTR Research Award

ZnO Based Short Wavelength Laser

Award identifier 0b03417d5dec51186410e51e6d19abff55fa2c50f4458947ad3bbe6e3e975823Awarding agency Department of Defense · Navy

Award amount

$70,000

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
CERMET, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Cermet, in collaboration with the Palo Alto Research Center, will fabricate and test a ZnO based semiconductor laser diode. Using Cermet's in house grown ZnO single crystal wafers, homoepitaxial films and epiwafers will be grown and characterized. Alaser diode will be designed with a prototype fabricated at the end of Phase II. The applications for a room temperature, ZnO p-n junctions, LEDs and laser diodes are vast. A transparent p-type conductor would be available to increase the efficiency ofestablished emitter and detector applications, including light emitting diodes, laser diodes, sensors / photodetectors, and photovoltaics. Additionally, a new family of transparent ZnO-based devices could be developed, including efficient UV/blue lightemitting diodes, sensors / photodetectors, and laser diodes.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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