DEVELOPMENT OF BULK DENSITY AL(2)O(3) THIN FILMS

THIN FILMS OF AL(2)O(3) ARE USUALLY DEPOSITED BY TECHNIQUES SUCH AS CVD OR ACTIVATED REACTIVE EVAPORATION. THESE PROCESSES, HOWEVER, REQUIRE A RATHER THIGH (800-1200 DEG C) SUBSTRATE TEMPERATURE WHICH RESULTS IN THE DIFFUSION OF SUBSTRATE MATERIAL INTO THE COATING, THUS, MODIFYING THE COATING PROPERTIES. BULK DENSITY FILMS ARE NOT COMMONLY PRODUCED BY THESE TECHNIQUES. WE PROPOSE TO USE ION BEAM ASSISTED (IBA) ELECTRON BEAM EVAPORATION TECHNIQUE TO FABRICATE BULK DENSITY AL(2)O(3) ON CARBON AND SILICON SUBSTRATES. LOW ENERGY (500EV-1500EV) 0-1 IONS WILL BE USED TO BOMBARD THE AL(2)O(3) FILMS DURING DEPOSITION BY ELECTRON BEAM EVAPORATION. RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS) IN COMBINATION WITH CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY (X-TEM) WILL BE USED TO EVALUATE THE DENSITY OF THIN FILMS.