SBIR/STTR Research Award

Ion Doped Quantum Well Lasers

Award identifier aa18050a772557eadf4701dc179fe570e24e2875a615a5b90cecb84f02e78b2eAwarding agency Department of Defense · Missile Defense Agency

Award amount

$300,000

Program and phase

SBIR · Phase II

Award year

1993

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Spire Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
RG46KJGARZF4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Diode lasers are great, but not temperature stable. Keeping the frequency constant, essential for communications, requires exotic (read expensive) heavy cooling systems. Investigators at Spire think they have a better way: build a laser diode whose frequency is naturally stable, as in ionic lasers such as neodymium doped YAG. Spire reasons that adding erbium to the quantum well of conventional AlGaAs lasers will stabilize the output at 1548nm, up from the common 800 to 900nm range and well matched to fibers. Spire knows how to make quantum well lasers and offers them as a finished product. Addition of erbium doping is another matter. It requires discovering a source gas compatible with existing metalorganic chemical vapor deposition and learning how to use it. That's what this research program proposes to do.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Defense

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