SBIR/STTR Research Award

High-Power, Frequency-Stabilized Diode Laser for Raman Spectroscopy

Award identifier 5626794d5d52c029c4ede5d5bbb2d620c7eacb14d24ceb332ffa72faff483ea6Awarding agency Department of Defense · Missile Defense Agency

Award amount

$64,681

Program and phase

SBIR · Phase I

Award year

1998

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
PROCESS INSTRUMENTS, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

We propose to develop intermediate to high power (.1 to 4 W), frequency- stable diode lasers with high modulation capability and long life. Our approach can provide fixed-frequency radiation sources for 1 pace-based ballistic missile defense applications. To demonstrate the technology we will develop a compact, lightweight, relatively inexpensive, proprietary external-cavity-stabilized diode laser array with high power that can be used for Raman spectroscopy. Our approach offers a simple, reliable laser source with no moving parts for reduced maintenance and good stability and, most importantly, that is affordable for many military and industrial applications. Since our external-cavity technology can be used with any existing high power diode array, the technology offers a large wavelength selection. Research with lower power (<l W) laser diode devices in a tunable, stabilized cavity has demonstrated that this technique offers potential for generating relatively high laser power suitable for space-based ballistic missile defense applications. Commercial gas-phase Raman spectroscopy applications include control of steel carbonization (hardening process) and improved control over the ethylene oxide sterilization of medical products.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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