SBIR/STTR Research Award
High-Power, Frequency-Stabilized Diode Laser for Raman Spectroscopy
Award amount
$64,681Program and phase
SBIR · Phase IAward year
1998Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- PROCESS INSTRUMENTS, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
We propose to develop intermediate to high power (.1 to 4 W), frequency- stable diode lasers with high modulation capability and long life. Our approach can provide fixed-frequency radiation sources for 1 pace-based ballistic missile defense applications. To demonstrate the technology we will develop a compact, lightweight, relatively inexpensive, proprietary external-cavity-stabilized diode laser array with high power that can be used for Raman spectroscopy. Our approach offers a simple, reliable laser source with no moving parts for reduced maintenance and good stability and, most importantly, that is affordable for many military and industrial applications. Since our external-cavity technology can be used with any existing high power diode array, the technology offers a large wavelength selection. Research with lower power (<l W) laser diode devices in a tunable, stabilized cavity has demonstrated that this technique offers potential for generating relatively high laser power suitable for space-based ballistic missile defense applications. Commercial gas-phase Raman spectroscopy applications include control of steel carbonization (hardening process) and improved control over the ethylene oxide sterilization of medical products.
Technology keywords
Not reported