MOCVD OF LEAD-GERMANATE FOR FERROELECTRIC NON-VOLATILE RAMS

NON-VOLATILE RANDOM ACCESS MEMORIES (NVRAM) OF 256 AND 512 BITS BASED ON THE FERROELECTRIC MATERIAL PB(ZR, TI)O3 ARE NOW BEING INTRODUCED INTO THE MARKET. LARGER MEMORIES, OF INTEREST TO THE MILITARY, REQUIRE IMPROVEMENTS IN THE BASIC MATERIAL. THE PROPERTIES OF BULK LEAD-GERMANATE SUGGEST GREAT POTENTIAL FOR THIS APPLICATION, HOWEVER THE PROPERTIES OF THIN FILMS FABRICATED FROM IT TO DATE HAVE NOT BEEN AS GOOD AS THOSE OF OTHER COMPOUNDS. PHASE I OF THE PROPOSED RESEARCH WILL INVESTIGATE CHEMICAL VAPOR DEPOSITON (CVD) AS A MEANS OF DEPOSITING LEAD GERMANATE FILMS OF EXCEPTIONAL PURITY, WITH IMPROVED UNIFORMITY IN COMPOSITION, STRUCTURE, AND THICKNESS. PRELIMINARY MEASUREMENTS OF ELECTRIC PROPERTIES WILL BE MADE. PHASE II OF THE PROPOSED RESEARCH WOULD STUDY MATERIAL INTERACTIONS WITH ELECTRODES AND OPTIMIZE THE ELECTRICAL PROPERTIES OF CVD FILMS.